Next-gen MRAM breakthrough can flip bits at SRAM-rivalling speeds with low power consumption — researchers claim true next-gen breakthrough using Tungsten layer

A cross-institutional research team has published a paper where a breakthrough in (MRAM) development is detailed. According to a blog post published by Taiwan’s National Yang Ming Chiao Tung University (NYCU), which spearheaded the efforts, they have managed to overcome a major challenge that hampered the development and adoption of this kind of non-volatile memory. The researchers claim that their spin–orbit torque magnetic random-access memory (SOT-MRAM) is a true next-gen breakthrough as it…