Intel details progress on fabbing 2D transistors a few atoms thick in standard high volume fab production environment — chipmaker outlines 300-mm fab compatible with integration of 2D transistor contacts and gate stacks

2D transistors based on 2D materials have been demonstrated in academia and research labs for more than a decade, but none of these demonstrations were compatible with high-volume semiconductor manufacturing, as they relied on small wafers, custom research tools, and fragile process steps. But this week, Intel Foundry and imec demonstrated a 300-millimeter–ready integration of critical process modules for 2D field-effect transistors (2DFETs), indicating that 2D materials and 2DFETs are moving closer…