Hardware

HBM undergoes major architectural shakeup as TSMC and GUC detail HBM4, HBM4E and C-HBM4E — 3nm base dies to enable 2.5x performance boost with speeds of up to 12.8GT/s by 2027

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Although the performance of high-bandwidth memory (HBM) has increased by an order of magnitude since its inception around a decade ago, many elements have remained fundamentally unchanged between HBM1 and HBM3E. But as the demands for bandwidth-hungry applications evolve, the technology must also change to accommodate them.

In new information revealed at TSMC’s European OIP forum in late November, HBM4 and HBM4E will offer four major changes. HBM4 will receive a 2,048-bit interface and base dies…

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